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Features
* * * * * * *
Supply-voltage Range: 2.7 V to 5.5 V Single-ended Output, no Balun Required Single-ended Input for RF and LO Excellent Isolation Characteristics Power-down Mode IP3 and Compression Point Programmable 2.5-GHz Operating Frequency
Benefits
* * * *
Reduced System Costs as only Few External Component (no Balun) are Required Small Package Very Low Current Consumption Easy to Use
Electrostatic sensitive device. Observe precautions for handling.
2.5-GHz Doublebalanced Mixer U2795B
Description
The U2795B is a 2.5-GHz mixer for WLAN and RF telecommunications equipment, e.g., DECT and PCN. The IC is manufactured using Atmel's advanced bipolar technology. A double-balanced approach was chosen to assure good isolation characteristics and a minimum of spurious products. The input and output are single-ended, and their characteristics are programmable. No output transformer or balun is required. Figure 1. Block Diagram
VS 2 RFi 3 P R1 VH VH VR Voltage regulator 8 PD R2 5 IFo 4
So
7 LO i GND
6 VS
1
Rev. 4654A-CELL-01/03
1
Pin Configuration
Figure 2. Pinning
1 2 3 4 8 7 6 5 PU LOi GND IFO
VS RF P SO
Pin Description
Pin 1 2 3 4 5 6 7 8 Symbol VS RFi P SO IFO GND LOi PU Function Supply voltage RF input Progamming port IP3, CP Output symmetry IF output Ground LO input Power-up
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U2795B
Functional Description
Supply Voltage Input Impedance 3rd Order Intercept Point (IP3) Output Impedance and Intercept Point Current Consumption, IS
The IC is designed for a supply-voltage range of 2.7 V to 5.5 V. As the IC is internally stabilized, the performance of the circuit is nearly independent of the supply voltage. The input impedance, ZRFi, is about 700 W with an additional capacitive component. This condition provides the best noise figure in combination with a matching network. The voltage divider, RP/R1, determinates both the input and output intercept point, IIP3 and OIP3. If the value of RP is infinite, the maximum value of IIP3 reachs about -4 dBm. The IP3/RP characteristics are shown in Figure 3 and Figure 4. The output impedance is shown in Figure 11. Both low output impedance and a high intercept point are defined to a high value of RP. Depending on the chosen input and output conditions of the IC, the current consumption,IS, is between 4 mA and 10 mA. The current consumption in dependence of Rp is shown in Figure 6. This feature provides extended battery lifetime. If this function is not used, Pin 8 has to be connected to VS (Pin 1). The symmetry of the load current can be matched and thus optimized for a given load impedance.
Power-up Output Symmetry
Absolute Maximum Ratings
Parameters Supply voltage Input voltage Junction temperature Storage-temperature range Symbol VS VI Tj Tstg Value 6 0 to VS 125 -40 to +125 Unit V V C C
Thermal Resistance
Parameters Junction ambient SO8 Symbol RthJA Value 175 Unit K/W
Operating Range
Parameters Supply-voltage range Ambient-temperature range Symbol VS Tamb Value 2.7 to 5.5 -40 to +85 Unit V C
3
4654A-CELL-01/03
Electrical Characteristics
VS = 3 V, fLOi = 1 GHz, IF = 900 MHz, RF = 100 MHz, RP = , system impedance Zo = 50 W, Tamb = 25C, RT = 56 W reference point Pin 6, unless otherwise specified
No. 1.1 1.2 1.3 2 2.1 2.2 2.3 3 3.1 3.2 3.3 3.4 4 4.1 5 5.1 5.2 5.3 6 6.1 7 7.1 7.2 8 8.1 9 9.1 10 10.1 10.2 10.3 10.4 Parameters Supply voltage range Supply Current Conversion Supply Current Operating Frequencies RFi frequency LOi frequency IFo frequency Isolation LO spurious at RFi RFi to LOi LO spurious at IFo IFo to LOi Output (IF) Output compression point Input (RF) Input impedance Input compression point 3rd-order input intercept point Input (LO) LO level Voltage Standing Wave Ratio (VSWR) Input LO Output IF Noise Performance Noise figure Power-down Mode Supply current Power-down Voltage "Power ON" "Power DOWN" Power-down current Settling time Power ON Power DOWN VS = 3.5 to 5.5 V VS = 2.7 to 3.5 V 8 8 8 5,8 VPON VPDN IPON IPDN tsPD 0.15 <5 < 30 VS -0.5 VS VS + 0.5 VS + 0.5 1 0.22 V V V mA A s D D D A D D VPU < 0.5V VPU = 0 V 1 ISPU 30 <5 A A B B PiLO = 0 dBm, RT = NF 10 dB D 7 4 VSWRLOi VSWRIFo <2 <2 D D 7 PiLO -6 dBm D 2 2 2 ZRFi CPi IIP3 700||0.8 -14 -4 W||pF dBm dBm D D D 5 CPO -10 dBm D PiLO = -10 to 0 dBm PiRF = -25 dBm PiLO = -10 to 0 dBm 7, 2 2, 7 5, 7 5, 7 ISLO-RF ISRF-LO ISLO-IF ISIF-LO -30 35 -25 30 dBm dB dBm dB D D D D 2 7 5 RFi fLOi fIFo 10 50 50 2500 2500 2500 MHz MHz MHz D D D VS = 2.7 V RL = 50 W, RT = RL = 50 W, RT = 56 W Test Conditions Pin 1 1 1 1 Symbol VS IS IS PGC PGC Min. 2.7 9 3 9 4 Typ. Max. 5.5 13 6.2 Unit V mA mA dB dB Type* A A A B
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
4
U2795B
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U2795B
Figure 3. IIP3 versus Resistor Rp, IF: 900 MHz
-4 -5 -6 -7 -8 -9 -10 0 20 40 60 Rp (kW) 80 100
Figure 4. OIP3 versus Resistor Rp, IF: 900 MHz
0
IIP3 (dBm) OIP3 (dBm)
-5
-10
-15
-20
-25 0 20 40 60 Rp (kW) 80 100
5
4654A-CELL-01/03
Figure 5. Gain versus Resistor Rp, LO: 1030 MHz, level -10 dBm; RF: 130 MHz, -30 dBm, RT = 56 W
3
-1
Gain (dB)
-5
-9
-13 0 20 40 60 Rp (kW) 80 100
Figure 6. Supply Current IS versus Resistor Rp
12 10 8
Is (mA)
6 4 2 0 0 20 40 60 Rp (kW) 80 100
6
U2795B
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U2795B
Figure 7. Gain versus IF Output Frequency, LO Level: -6 dBm, RF: 130 MHz, -35 dBm; Parameter: RF Input Termination
18 with RF input matching LS = 220 nH, Cp = 4.7 pF 14
Gain (dB)
10
without RT
6
2 with RT = 56 W -2 0 500 1000 1500 2000 2500 IF (MHz)
Figure 8. IIP3 versus IF Output Frequency, LO Level: -6 dBm; RF: 130 MHz/ 130.1 MHz, -35 dBm; Parameter: RF Input Termination
0 -2 -4 -6 with R T = 56 W
IIP3 (dBm)
-8 -10 -12 -14 -16 -18 0 500
without R T
with RF input matching LS = 220 nH, C p = 4.7 pF 1000 1500 2000 2500
IF (MHz)
7
4654A-CELL-01/03
Figure 9. Double Sideband Noise Figure versus IF Output Frequency; LO: 1000 MHz, Level 0 dBm; no RF Input Matching, RT Left Out
12 10 8
NF (dB)
6 4 2 0 0 200 400 IF (MHz) 600 800
Figure 10. Typical VSWR Frequency Response of the IF Output, RP =
5
4
VSWR
3
2
1 100
280
460
640
820
1000
IF Frequency (MHz)
8
U2795B
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U2795B
Figure 11. Typical Impedance of the Output versus RP at Frequency fIFo = 900 MHz Markers (from Left to Right): RP = /22 kW/10 kW/8.2 kW/5.6 kW
j
0.5j
2j
0.2j
5j
0
0.2
0.5
1
2
5
-0.2j
-5j
-0.5j -j
-2j
Figure 12. Typical S11 Frequency Response of the IF Output, RP = , IF Frequency from 100 MHz to 1000 MHz, Marker: 900 MHz
j
0.5j
2j
0.2j
5j
0
0.2
0.5
1
2
5
-0.2j
-5j
-0.5j
-2j
-j
9
4654A-CELL-01/03
Figure 13. Typical S11 Frequency Response of the RF Intput, RP = , RT = RF Frequency from 100 MHz to 1000 MHz, Marker: 900 MHz
j
0.5j
2j
0.2j
5j
0
0.2
0.5
1
2
5
-0.2j
-5j
-0.5j -j
-2j
Figure 14. Typical S11 Frequency Response of the LO Intput, RP = , LO Frequency from 100 MHz to 1000 MHz, Marker: 900 MHz
j
0.5j
2j
0.2j
5j
0
0.2
0.5
1
2
5
-0.2j
-5j
-0.5j -j
-2j
10
U2795B
4654A-CELL-01/03
U2795B
Application
C1 VS RT RF Rp 3 C6 4 C3 RSO R I C2
U2795B
C7 1 2 8 C5 7 6 5 C4 IF LO PU
Table 1. Part List
Part Value
C1 C2, C3, C4, C5, C6, C7 *RP
10 nF 100 pF
50-W Microstrip *RSO ------ RT 68 W optional 56 W
If the part-list values are used, the PU settling time is < 20 s. Using other values, time requirements in burst-mode applications have to be considered. The values of RSO and RP depend on the input and output condition requirements. For RSO, 68 W is recommended. By means of the optional R I , the intercept and compression point can be slightly increased; values between 500 W and 1 kW are suitable. Please note that such modification will also increase the supply current.
11
4654A-CELL-01/03
Application Circuit (Evaluation Board)
12
U2795B
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U2795B
Ordering Information
Extended Type Number Package Remarks
U2795B-MFP U2795B-MFPG3
SO8 SO8
Tube Taped and reeled
Package Information
Package SO8
Dimensions in mm
5.00 4.85 1.4 0.4 1.27 3.81 8 5 0.25 0.10 0.2 3.8 6.15 5.85 5.2 4.8 3.7
technical drawings according to DIN specifications
1
4
13
4654A-CELL-01/03
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4654A-CELL-01/03 xM

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